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| BF1207 Dual N-channel dual gate MOSFET Rev. 01 -- 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with partly integrated bias s Internal switch to save external components s Superior cross-modulation performance during AGC s High forward transfer admittance s High forward transfer admittance to input capacitance ratio 1.3 Applications s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 5 V supply voltage, such as digital and analog television tuners and professional communication equipment Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter VDS ID Ptot yfs drain-source voltage drain current total power dissipation forward transfer admittance Conditions DC DC Tsp 107 C f = 1 MHz amplifier A; ID = 18 mA amplifier B; ID = 14 mA Ciss(G1) input capacitance at gate1 f = 100 MHz amplifier A amplifier B Crss NF Xmod reverse transfer capacitance f = 100 MHz noise figure cross-modulation amplifier A; f = 400 MHz amplifier B; f = 800 MHz input level for k = 1 % at 40 dB AGC amplifier A amplifier B Tj [1] [1] Min 25 26 - Typ 30 31 2.2 1.9 20 1.3 1.4 Max Unit 6 30 180 40 41 2.7 2.4 V mA mW mS mS pF pF fF dB dB 100 100 - 105 103 - 150 dBV dBV C junction temperature Tsp is the temperature at the soldering point of the source lead. 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Discrete pinning Description drain (AMP A) source drain (AMP B) gate1 (AMP B) gate2 gate1 (AMP A) G1A AMP A sym108 Simplified outline 6 5 4 Symbol AMP B G1B DB 1 2 3 G2 S DA 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 2 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 3. Ordering information Table 3: Ordering information Package Name BF1207 Description plastic surface mounted package; 6 leads Version SOT363 Type number 4. Marking Table 4: BF1207 [1] * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. Marking Marking code [1] M2* Type number 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS ID IG1 IG2 Ptot Tstg Tj [1] Parameter drain-source voltage drain current gate1 current gate2 current total power dissipation storage temperature junction temperature Conditions DC DC Min - Max 6 30 10 10 180 +150 150 Unit V mA mA mA mW C C Per MOSFET Tsp 107 C [1] -65 - Tsp is the temperature at the soldering point of the source lead. 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 3 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 250 Ptot (mW) 200 001aac741 150 100 50 0 0 50 100 150 Tsp (C) 200 Fig 1. Power derating curve 6. Thermal characteristics Table 6: Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to soldering point Conditions Typ 240 Unit K/W 7. Static characteristics Table 7: Static characteristics Tj = 25 C. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions VG1-S = VG2-S = 0 V; ID = 10 A amplifier A amplifier B V(BR)G1-SS V(BR)G2-SS VF(S-G1) VF(S-G2) VG1-S(th) VG2-S(th) IDSX gate1-source breakdown voltage gate2-source breakdown voltage forward source-gate1 voltage forward source-gate2 voltage gate1-source threshold voltage gate2-source threshold voltage drain-source current VGS = VDS = 0 V; IG1-S = 10 mA VGS = VDS = 0 V; IG2-S = 10 mA VG2-S = VDS = 0 V; IS-G1 = 10 mA VG1-S = VDS = 0 V; IS-G2 = 10 mA VDS = 5 V; VG2-S = 4 V; ID = 100 A VDS = 5 V; VG1-S = 5 V; ID = 100 A VG2-S = 4 V; VDS = 5 V; RG1 = 68 k amplifier A amplifier B [1] [2] Min Typ Max Unit Per MOSFET; unless otherwise specified 6 6 6 6 0.5 0.5 0.3 0.4 13 9 10 10 1.5 1.5 1.0 1.0 23 19 V V V V V V V V mA mA 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 4 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET Table 7: Static characteristics ...continued Tj = 25 C. Symbol IG1-S Parameter gate1 cut-off current Conditions VG2-S = VDS(A) = 0 V amplifier A; VG1-S(A) = 5 V; VDS(B) = 0 V amplifier B; VG1-S(A) = 0 V; ID(B) = 0 A IG2-S [1] [2] Min - Typ - Max Unit 50 50 20 nA nA nA gate2 cut-off current VG2-S = 4 V; VG1-S = VDS(A) = VDS(B) = 0 V; RG1 connects gate1 (A) to VGG = 5 V (see Figure 3). RG1 connects gate1 (B) to VGG = 0 V (see Figure 3). 20 ID (mA) 16 001aac742 (1) G1B (2) DB 12 (3) G2 S 8 (4) G1A RG1 VGG (6) (5) DA 4 001aac881 0 0 1 2 3 4 VGG (V) 5 (1) ID(A); RG1 = 47 k. (2) ID(A); RG1 = 68 k. (3) ID(A); RG1 = 100 k. (4) ID(B); RG1 = 100 k. (5) ID(B); RG1 = 68 k. (6) ID(B); RG1 = 47 k. VDS(A) = VDS(B) = 5 V; VG2-S = 4 V; Tj = 25 C. VGG = 5 V: amplifier A is on; amplifier B is off. VGG = 0 V: amplifier A is off; amplifier B is on. Fig 2. Drain currents of MOSFET A and B as function of VGG Fig 3. Functional diagram 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 5 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8: Dynamic characteristics for amplifier A Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 18 mA. [1] Symbol yfs Ciss(G1) Ciss(G2) Coss Crss Gtr Parameter forward transfer admittance input capacitance at gate1 input capacitance at gate2 output capacitance reverse transfer capacitance power gain Conditions Tj = 25 C f = 100 MHz f = 1 MHz f = 100 MHz f = 100 MHz BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS f = 400 MHz; GS = 2 mS; GL = 1 mS f = 800 MHz; GS = 3.3 mS; GL = 1 mS NF noise figure f = 11 MHz; GS = 20 mS; BS = 0 S f = 400 MHz; YS = YS(opt) f = 800 MHz; YS = YS(opt) Xmod cross-modulation input level for k = 1 %; fw = 50 MHz; funw = 60 MHz at 0 dB AGC at 10 dB AGC at 20 dB AGC at 40 dB AGC [1] [2] For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V. Measured in Figure 29 test circuit. [2] Min 25 30 26 21 - Typ 30 2.2 3.5 0.9 20 34 30 25 3.0 1.3 1.4 Max 40 2.7 38 34 29 - Unit mS pF pF pF fF dB dB dB dB dB dB 90 100 90 99 105 - dBV dBV dBV dBV 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 6 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 8.1.1 Graphs for amplifier A 35 ID (mA) 30 25 001aac882 (1) (2) (3) 32 ID (mA) 24 001aaa883 (1) (2) (3) (4) (5) (4) 20 (5) 16 (6) (7) 15 10 5 (7) (6) (8) 8 (9) 0 0 0.4 0.8 1.2 1.6 2.0 VG1-S (V) 0 0 2 4 VDS (V) 6 (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. VDS(A) = 5 V; Tj = 25 C. (1) VG1-S(A) = 1.9 V. (2) VG1-S(A) = 1.8 V. (3) VG1-S(A) = 1.7 V. (4) VG1-S(A) = 1.6 V. (5) VG1-S(A) = 1.5 V. (6) VG1-S(A) = 1.4 V. (7) VG1-S(A) = 1.3 V. (8) VG1-S(A) = 1.2 V. (9) VG1-S(A) = 1.1 V. VDS(A) = 5 V; VG2-S = 4 V; Tj = 25 C. Fig 4. Amplifier A: transfer characteristics; typical values Fig 5. Amplifier A: output characteristics; typical values 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 7 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 40 yfs (mS) 30 001aac884 25 ID (mA) 001aac885 (1) (1) (2) (3) 20 (2) (4) 15 (5) 20 (3) (6) 10 (7) 10 (5) (4) 5 0 0 (7) (6) 0 16 24 ID (mA) 32 0 2 4 VGG = VDS (V) 6 8 (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. VDS(A) = 5 V; Tj = 25 C. (1) RG1(A) = 39 k. (2) RG1(A) = 47 k. (3) RG1(A) = 68 k. (4) RG1(A) = 82 k. (5) RG1(A) = 100 k. (6) RG1(A) = 120 k. (7) RG1(A) = 150 k. VG2-S = 4 V; Tj = 25 C. Fig 6. Amplifier A: forward transfer admittance as a function of drain current; typical values 20 ID (mA) 16 Fig 7. Amplifier A: drain current as a function of VDS and VGG; typical values 001aac886 12 8 4 0 0 1 2 3 4 5 Vsupply (V) VG2-S = 4 V, Tj = 25 C, RG1(B) = 68 k (connected to ground); see Figure 3. Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 8 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 120 Vunw (dBV) 110 001aac887 0 gain reduction (dB) 10 001aac888 20 100 30 90 40 80 0 10 20 30 40 50 gain reduction (dB) 50 0 1 2 3 VAGC (V) 4 VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; fw = 50 MHz; funw = 60 MHz; Tamb = 25 C; see Figure 29. VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; see Figure 29. Fig 9. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values 32 ID (mA) 24 Fig 10. Amplifier A: gain reduction as a function of AGC voltage; typical values 001aac889 16 8 0 0 10 20 30 40 50 gain reduction (dB) VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; Tamb = 25 C; see Figure 29. Fig 11. Amplifier A: drain current as a function of gain reduction; typical values 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 9 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 102 bis, gis (mS) 10 bis 1 gis 10-1 001aac890 102 001aac891 -102 |yfs| (mS) |yfs| fs (deg) 10 fs -10 10-2 10 102 f (MHz) 103 1 10 102 f (MHz) -1 103 VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 18 mA. VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 18 mA. Fig 12. Amplifier A: input admittance as a function of frequency; typical values 103 |yrs| (S) 102 rs 001aac892 Fig 13. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values 10 bos, gos (mS) 1 bos 001aac893 -103 rs (deg) -102 |yrs| 10 -10 10-1 gos 1 10 102 f (MHz) 103 -1 10-2 10 102 f (MHz) 103 VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 18 mA. VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 18 mA. Fig 14. Amplifier A: reverse transfer admittance and phase as a function of frequency: typical values Fig 15. Amplifier A: output admittance as a function of frequency; typical values 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 10 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 8.1.2 Scattering parameters for amplifier A Table 9: Scattering parameters for amplifier A VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 18 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 C; typical values. f s11 (MHz) Magnitude Angle (ratio) (deg) 50 100 200 300 400 500 600 700 800 900 1000 0.987 0.983 0.976 0.966 0.952 0.935 0.917 0.898 0.876 0.852 0.826 -4.169 -8.109 -15.97 s21 Magnitude (ratio) 2.87 2.95 2.93 Angle (deg) 175.5 s12 Magnitude Angle (ratio) (deg) 0.0008 83.82 82.08 77.50 73.45 69.42 65.72 61.48 58.05 52.74 48.61 43.86 s22 Magnitude Angle (ratio) (deg) 0.992 0.992 0.990 0.989 0.986 0.984 0.981 0.977 0.974 0.970 0.967 -1.42 -2.86 -5.66 -8.49 -11.28 -14.03 -16.80 -19.55 -22.32 -25.10 -27.88 171.14 0.0015 162.44 0.0028 153.77 0.0041 145.23 0.0053 136.82 0.0063 128.50 0.0072 120.44 0.0079 112.33 0.0084 104.32 0.0089 96.42 0.0091 -23.844 2.89 -31.575 2.84 -35.225 2.78 -46.678 2.72 -54.094 2.65 -61.205 2.57 -68.299 2.49 -75.321 2.41 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 11 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 8.2 Dynamic characteristics for amplifier B Table 10: Dynamic characteristics for amplifier B Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 14 mA. [1] Symbol Parameter yfs Ciss(G1) Ciss(G2) Coss Crss Gtr forward transfer admittance input capacitance at gate1 input capacitance at gate2 output capacitance power gain Conditions Tj = 25 C f = 100 MHz f = 1 MHz f = 100 MHz BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS f = 400 MHz; GS = 2 mS; GL = 1 mS f = 800 MHz; GS = 3.3 mS; GL = 1 mS NF noise figure f = 11 MHz; GS = 20 mS; BS = 0 S f = 400 MHz; YS = YS(opt) f = 800 MHz; YS = YS(opt) Xmod cross-modulation input level for k = 1 %; fw = 50 MHz; funw = 60 MHz at 0 dB AGC at 10 dB AGC at 20 dB AGC at 40 dB AGC [1] [2] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V. Measured in Figure 30 test circuit. [2] Min 26 30 27 23 90 100 Typ 31 1.8 3.5 0.8 20 34 31 27 5 1.3 1.4 88 94 103 Max Unit 41 2.3 38 35 31 mS pF pF pF fF dB dB dB dB dB dB dBV dBV dBV dBV reverse transfer capacitance f = 100 MHz 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 12 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 8.2.1 Graphs for amplifier B 001aac894 (1) (2) (3) (4) 30 ID (mA) 20 32 ID (mA) 24 001aac895 (1) (2) (3) (5) 16 (4) (5) 10 (6) (6) 8 (7) (7) 0 0 0.4 0.8 1.2 1.6 2 VG1-S (V) 0 0 2 4 VDS (V) 6 (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 C. (1) VG1-S(B) = 1.7 V. (2) VG1-S(B) = 1.6 V. (3) VG1-S(B) = 1.5 V. (4) VG1-S(B) = 1.4 V. (5) VG1-S(B) = 1.3 V. (6) VG1-S(B) = 1.2 V. (7) VG1-S(B) = 1.1 V. VG2-S = 4 V; VG1-S(A) = 0 V; Tj = 25 C. Fig 16. Amplifier B: transfer characteristics; typical values Fig 17. Amplifier B: output characteristics; typical values 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 13 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 40 yfs (mS) 30 001aac896 20 ID (mA) 001aac897 (1) 16 (1) (2) (2) 12 (3) (4) (5) 20 8 (3) 10 (4) (5) 4 0 0 (7) (6) 0 16 24 ID (mA) 32 0 1 2 3 4 5 VG2-S (V) 8 (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 C. (1) VDS = 5 V. (2) VDS = 4.5 V. (3) VDS = 4 V. (4) VDS = 3.5 V. (5) VDS = 3 V. VG1-S(A) = 0 V; Tj = 25 C. Fig 18. Amplifier B: forward transfer admittance as a function of drain current; typical values 20 ID(A) (mA) 16 001aac898 Fig 19. Amplifier B: drain current as function of gate2 voltage; typical values 16 ID (mA) 12 001aac899 12 8 8 4 4 0 0 2 4 VDS (V) 6 0 -40 -30 -20 -10 IG1 (A) 0 VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 C. VDS(B) = 5 V; VG2-S = 4 V; VG1-S(A) = 0 V; Tj = 25 C. Fig 20. Amplifier B: drain current as a function of drain source voltage; typical values Fig 21. Amplifier B: drain current as a function of gate1 current; typical values 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 14 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 120 Vunw (dBV) 110 001aac900 0 gain reduction (dB) 10 001aac901 20 100 30 90 40 80 0 20 40 60 gain reduction (dB) 50 0 1 2 3 VAGC (V) 4 VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1(B) = 150 k (connected to VGG); fw = 50 MHz; funw = 60 MHz; Tamb = 25 C; see Figure 30. VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1(B) = 150 k (connected to VGG); f = 50 MHz; Tamb = 25 C; see Figure 30. Fig 22. Amplifier B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values 20 ID (mA) 16 Fig 23. Amplifier B: typical gain reduction as a function of AGC voltage; typical values 001aac902 12 8 4 0 0 20 40 60 gain reduction (dB) VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1(B) = 150 k (connected to VGG); f = 50 MHz; Tamb = 25 C; see Figure 30. Fig 24. Amplifier B: drain current as a function of gain reduction; typical values 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 15 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 102 bis, gis (mS) 10 bis 1 001aac903 102 001aac904 -102 |yfs| (mS) |yfs| fs (deg) 10 fs gis -10 10-1 10-2 10 102 f (MHz) 103 1 10 102 f (MHz) -1 103 VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 14 mA. VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 14 mA. Fig 25. Amplifier B: input admittance as a function of frequency; typical values 103 |yrs| (S) 102 rs 001aac905 Fig 26. Amplifier B: forward transfer admittance and phase as a function of frequency; typical values 10 bos, gos (mS) 1 bos 001aac906 -103 rs (deg) -102 |yrs| gos 10 -10 10-1 1 10 102 f (MHz) 103 -1 10-2 10 102 f (MHz) 103 VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 14 mA. VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 14 mA. Fig 27. Amplifier B: reverse transfer admittance and phase as a function of frequency; typical values Fig 28. Amplifier B: output admittance as a function of frequency; typical values 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 16 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 8.2.2 Scattering parameters for amplifier B Table 11: Scattering parameters for amplifier B VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 14 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 C; typical values. f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 s11 Magnitude (ratio) 0.993 0.992 0.987 0.979 0.969 0.957 0.943 0.927 0.907 0.885 0.858 Angle (deg) s21 Magnitude (ratio) Angle (deg) s12 Magnitude (ratio) Angle (deg) 95.97 90.33 85.03 82.94 81.97 81.03 79.77 79.04 79.42 75.47 73.48 s22 Magnitude (ratio) 0.991 0.990 0.988 0.986 0.983 0.980 0.977 0.973 0.969 0.964 0.958 Angle (deg) -1.39 -2.79 -5.49 -8.21 -10.91 -13.63 -16.40 -19.13 -21.93 -24.85 -27.75 -3.018 3.07 -6.186 3.07 -12.43 3.09 -18.60 3.02 -24.62 2.99 -30.72 2.95 -36.71 2.90 -42.77 2.86 -48.91 2.79 -54.77 2.736 -61.01 2.675 176.04 0.0004 172.05 0.0011 164.13 0.0024 156.28 0.0036 148.48 0.0046 140.69 0.0056 132.87 0.0065 125.21 0.0074 117.22 0.0082 109.29 0.0086 101.18 0.0092 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 17 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 9. Test information VAGC VDS(B) 5V 4.7 nF 10 k 4.7 nF L1 2.2 H G1B G2 G1A DB S DA 4.7 nF 50 4.7 nF BF1207 4.7 nF RGEN 50 Vi 50 RG1 L2 2.2 H 4.7 nF RL 50 VGG 5V VDS(A) 5V 001aac907 Fig 29. Cross-modulation test set-up for amplifier A VAGC VDS(B) 5V 4.7 nF 10 k 4.7 nF L1 2.2 H G1B G2 G1A DB S DA 4.7 nF RGEN 50 Vi 50 4.7 nF BF1207 RL 50 4.7 nF 50 RG1 L2 2.2 H 4.7 nF VGG 0V VDS(A) 5V 001aac908 Fig 30. Cross-modulation test set-up for amplifier B 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 18 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 10. Package outline Plastic surface mounted package; 6 leads SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-11-08 Fig 31. Package outline SOT363 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 19 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 11. Revision history Table 12: BF1207_1 Revision history Release date 20050728 Data sheet status Product data sheet Change notice Doc. number 9397 750 14955 Supersedes Document ID 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 20 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14955 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 28 July 2005 21 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.1.1 8.1.2 8.2 8.2.1 8.2.2 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics for amplifier A. . . . . . . 6 Graphs for amplifier A . . . . . . . . . . . . . . . . . . . . 7 Scattering parameters for amplifier A . . . . . . . 11 Dynamic characteristics for amplifier B. . . . . . 12 Graphs for amplifier B . . . . . . . . . . . . . . . . . . . 13 Scattering parameters for amplifier B . . . . . . . 17 Test information . . . . . . . . . . . . . . . . . . . . . . . . 18 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information . . . . . . . . . . . . . . . . . . . . 21 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 July 2005 Document number: 9397 750 14955 Published in The Netherlands |
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